| PART |
Description |
Maker |
| TC58128FT |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| AMD27C256 AM27C256-120 AM27C256-120EC AM27C256-120 |
256 Kilobit (32,768 x 8-Bit) CMOS EPROM
Circular Connector; No. of Contacts:5; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
8-input positive-NAND gates 14-SO 0 to 70 256千比特（32,768 × 8位）的CMOS存储
256 Kilobit (32,768 x 8-Bit) CMOS EPROM 256千比特（32,768 × 8位）的CMOS存储
256 Kilobit (32,768 x 8-Bit) CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO32
Quadruple 2-Input Multiplexers With Storage 16-PDIP 0 to 70
8-Line To 3-Line Priority Encoder 16-PDIP 0 to 70
Universal shift / storage registers 20-SOIC 0 to 70
8-input positive-NAND gates 14-SOIC 0 to 70
8-input positive-NAND gates 14-PDIP 0 to 70
8-Line To 3-Line Priority Encoder 16-SO 0 to 70
Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70
256 Kilobit (32/768 x 8-Bit) CMOS EPROM
|
Cypress Semiconductor, Corp.
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
| TC58256DC |
CMOS NAND EPROM
|
Toshiba Semiconductor
|
| K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| TH58NVG2S3BTG00 |
4-Gbit CMOS NAND EPROM
|
Toshiba
|
| TC58NS256BDC |
256 MBit CMOS NAND EPROM
|
Toshiba
|
|
